Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase-change memory (PM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase-change material, has attracted continuous exploration. Along the traditional GeTe-Sb2Te3 tie line, the binary compound Sb2Te3 is a highspeed phase-change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb2Te3, called Cr-Sb2Te3 (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb2Te3 without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10-year data retention is 120.8 degrees C, which indicates better thermal stability than GST and pure Sb2Te3. PCM cells based on CST_10.5 present small threshold current/voltage (4 mu A/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr-Sb2Te3 with suitable composition is a promising novel phase-change material used for PCM with high speed and good thermal stability performances. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim