Carbon Nanotube-Based Nanoelectromechanical Resonator as Strain Sensor

Strain sensing via quantum nanodevice is investigated in the present paper under the effect of an ac-field. This nanodevice is modeled as semiconducting carbon nanotube (CNT) quantum dot. This CNT quantum dot is connected to two metallic leads. A metallic gate is used to govern the electrostatics and the switching of the CNT channel. A back gate is used to control the contact of the interface of CNT quantum dot/metal. A formula for the current is derived using Landauer-Buttiker equation and also a gauge factor is derived. Results show that due to the effect of tensile strain, the quantum transport characteristics are changed. Also, our calculation of strain induced band gab energy variations in CNT can be technological relevance. The present research is very important for sensing strain in nanostructured materials.