High-frequency and low-resonance-impedance lamb wave resonators utilizing the S1 mode
Solid-State Sensors, Actuators and Microsystems（2015）
摘要
In this work, a high-frequency (fs) and low-resonance-impedance (Zmin) Lamb wave resonator utilizing the first-order symmetric (S1) mode propagating in highly textured aluminum nitride (AlN) plates is presented. In order to achieve the larger electromechanical coupling coefficient and smooth phase velocity dispersion as well as to avoid the negative group velocity in the S1 Lamb wave mode, the 4-μm-thick AlN layer and 3-μm-wide finger electrodes are employed in the Lamb wave resonator design. The experimental results show that despite the S1 mode shows a slightly lower quality factor than the lowest-order symmetric (S0) mode, the S1 mode presents a Zmin of 94 © at 1.34 GHz, lower than the S0 mode showing a Zmin equal to 224 © at 878.3 MHz.
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关键词
III-V semiconductors,Q-factor,aluminium compounds,electrodes,surface acoustic wave resonators,surface acoustic waves,wide band gap semiconductors,AlN,S1 mode,aluminum nitride plate,electromechanical coupling coefficient,finger electrode,first-order symmetric mode,frequency 1.34 GHz,frequency 878.3 MHz,high-frequency Lamb wave resonator,low-resonance-impedance Lamb wave resonator,lowest-order symmetric mode,negative group velocity,phase velocity dispersion,quality factor,resistance 224 ohm,resistance 94 ohm,Lamb wave resonators,RF MEMS,aluminum nitride (AlN),first-order symmetric mode,group velocity,piezoelectric resonators,quality factor (Q),resonance impedance
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