Characterization of the First FBK High-Density Cell Silicon Photomultiplier Technology

Electron Devices, IEEE Transactions(2013)

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摘要
In this paper, we present the results of the characterization of the first high-density (HD) cell silicon photomultipliers produced at FBK. The most advanced prototype manufactured with this technology has a cell size of 15 × 15 μm2 featuring a nominal fill factor of 48%. To reach this high area coverage, we developed a new border structure to confine the high electric-field region of each single-photon avalanche diode. The measured detection efficiency approaches 30% in the green part of the light spectrum and it is above 20% from 400 to 650 nm. At these efficiency values, the correlated noise is very low, giving an excess charge factor below 1.1. We coupled a 2 × 2 × 10- mm3 LYSO scintillator crystal to a 2.2 × 2.2- mm2 silicon photomultiplier, obtaining very promising results for PET application: energy resolution of less than 11% full-width at half maximum (FWHM) with negligible loss of linearity and coincidence resolving time of 200-ps FWHM at 20°C.
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avalanche diodes,elemental semiconductors,photomultipliers,silicon,fbk,lyso scintillator crystal,correlated noise,electric-field region,full-width at half maximum,high-density cell silicon photomultiplier technology,nominal fill factor,single-photon avalanche diode,temperature 20 degc,excess noise factor,positron emission tomography,silicon photomultipliers
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