Automated parameter extraction software for silicon and high-voltage silicon carbide power diodes

Nanying Yang,Tam Duong,Jeongo Jeong,J M Ortiz,A R Hefner,Kathleen Meehan

Control and Modeling for Power Electronics（2010）

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摘要

This paper presents an automated parameter extraction software package developed for constructing silicon (Si) and silicon carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts the data necessary to establish a library of power diode component models and provides a method for quantitatively comparing between different types of devices and establishing performance metrics for device development. To verify the accuracy of DIMPACT, the extracted model parameter sets are incorporated into the circuit simulation software to compare model predictions with measured static and transient diode characteristics. In this paper, the DIMPACT parameter extraction results are demonstrated for a 45 V, 15 A Si Schottky diode; a 600 V, 200 A Si PiN diode; a 10 kV, 5 A SiC Junction Barrier Schottky (JBS) diode; and a 10 kV, 20 A SiC PiN diode. The validation results indicate that the model parameters extracted using DIMPACT are accurate.

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关键词

schottky diodes,circuit simulation,electronic engineering computing,p-i-n diodes,silicon compounds,dimpact,sic,sic pin diode,sic junction barrier schottky diode,automated parameter extraction software,circuit simulation software,current 15 a,current 20 a,current 200 a,current 5 a,diode model parameter extraction tools,power diode component models,silicon carbide power diode,silicon power diode,voltage 10 kv,voltage 45 v,voltage 600 v,power diodes,parameter extraction,schottky diode,high voltage,comparative modeling,component model,mathematical model

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