High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs
Electron Device Letters, IEEE（2013）
摘要
We have developed a high-quality SiO2 deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of ~12 MV/cm was achieved using the optimized deposition conditions that were successfully applied in fabrication of the normally off AlGaN/GaN-on-Si MOSHFETs. The fabricated device exhibited excellent characteristics: a maximum drain current density of 375 mA/mm, a threshold voltage of 3 V, and a breakdown voltage of 820 V.
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关键词
iii-v semiconductors,aluminium compounds,chemical vapour deposition,current density,elemental semiconductors,gallium compounds,power mosfet,silicon,silicon compounds,wide band gap semiconductors,algan-ga-si,sio2,aluminium gallium nitride-gallium nitride-on-silicon recessed moshfet,breakdown voltage,drain current density,gate oxide,high-quality icpcvd silicon dioxide,high-quality silicon dioxide deposition process,inductively-coupled plasma chemical vapor deposition system,optimized deposition conditions,power switching applications,threshold voltage,voltage 3 v,voltage 820 v,$hbox{sio}_{2}$,gan,inductively coupled plasma chemical vapor deposition (icpcvd),metal–oxide–semiconductor heterostructure field-effect transistor (moshfet),plasmas,logic gates
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