An atomic level study of multiple co-implantation technology for 32nm and beyond pMOSFETs ultra-shallow junction

Y Sun,Y Cheng,Yinpin Wang,Tomonari Yamamoto,C Cheng, Shaohwang Sia, Yuchia Chang, Y Chen,Chingwei Tsai,Yiming Sheu,H C H Wang

VLSI Technology, Systems and Applications（2011）

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摘要

Carbon, Fluorine, and Nitrogen are the co-implant species known for performing PMOS ultra-shallow junction. For the first time, it is demonstrated that the combination of the above three co-implant species could be most effective in suppressing boron diffusion for the continuous device performance improvement of sub-32 nm technology. Vth roll-off characteristics were dramatically improved and a DIBL improvement of 30 mV/V was demonstrated by applying this multiple co-implantation technology. Distinctive effect of each co-implant species for PMOS ultra-shallow junction formation was found and clarified for the first time based on SIMS analysis and kinetic Monte Carlo simulation.

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关键词

mosfet,monte carlo methods,boron,carbon,elemental semiconductors,fluorine,ion implantation,nitrogen,secondary ion mass spectra,semiconductor process modelling,silicon,pmos ultra-shallow junction,sims analysis,si:c,f,n,b,atomic level study,boron diffusion suppression,kinetic monte carlo simulation,multiple coimplantation technology,pmosfet ultra-shallow junction,size 32 nm,voltage roll-off characteristics,logic gates,solids,kinetic theory

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