Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Yue Zhang,Weisheng Zhao,Jacquesolivier Klein, Wang Kang,Damien Querlioz,C Chappert,D Ravelosona

Nanotechnology（2013）

引用 22|浏览8

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摘要

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) provides a promising pathway for the next generation of non-volatile memory and logic chips. The perpendicular magnetic anisotropy (PMA) in CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) nanopillar provides high thermal stability and low critical current. However, the STT switching mechanism of MTJ has been revealed intrinsically stochastic, which results from the unavoidable thermal fluctuations of magnetization. This phenomenon affects deeply the reliability of hybrid CMOS/MTJ interface circuits and drives important power overhead. In this paper, we present a multilevel cell (MLC) STT-MRAM benefiting from the stochastic behaviors. It allows not only higher storage density, but also reduces the programming power and delay. This new cell can be also used as electrical synapse to build up neuromorphic computing systems or other biological networks. Monte-Carlo statistical simulations based on a 40 nm technology node have been carried out to validate its functionality and demonstrate its performance.

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关键词

cmos integrated circuits,mram devices,monte carlo methods,cobalt compounds,integrated circuit reliability,iron compounds,logic circuits,magnesium compounds,magnetic tunnelling,thermal stability,cofeb-mgo-cofeb,monte-carlo statistical simulations,pma,stt-mram,critical current,electrical synapse,hybrid cmos-mtj interface circuits,logic chips,magnetic random access memory,magnetic tunnel junction,multilevel cell spin transfer torque,neuromorphic computing systems,nonvolatile memory,perpendicular magnetic anisotropy,power overhead,reliability,size 40 nm,stochastic behaviors,stochastic switching,mram,multilevel cell,non-volatile,stochastic

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