A 40% PAE linear CMOS power amplifier with feedback bias technique for WCDMA applications

Radio Frequency Integrated Circuits Symposium(2010)

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摘要
A highly efficient CMOS linear power amplifier for WCDMA applications with feedback bias technique is presented. The method involves connecting the gates of common-gate devices of the driver stage and the power stage in cascode configurations by a feedback network for enhancing linearity. To achieve high efficiency and linearity simultaneously, large-signal IMD minimum (IMD sweet spot) is properly used at the desired output power level. The proposed PA was fabricated in a 0.18-μm CMOS technology. The experimental results demonstrate a gain of 26 dB, a maximum output power of 26 dBm with 46.4% of peak PAE, and a linear output power of 23.5 dBm with 40% PAE using a 3GPP WCDMA modulated signal. Both simulation and measurement results show an excellent large-signal IMD minimum at the output power using a WCDMA modulated signal.
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关键词
cmos integrated circuits,broadband networks,code division multiple access,power amplifiers,radiofrequency amplifiers,3gpp wcdma modulated signal,cmos technology,imd sweet spot,pae linear cmos power amplifier,wcdma application,cascode configuration,common-gate device,driver stage,feedback bias,feedback network,gain 26 db,large-signal imd minimum,linear output power,power stage,size 0.18 mum,cmos,wcdma,bias,efficiency,feedback,linearity,power amplifier,sweet spot,feedback linearization,gain,transistors,spread spectrum communication,power generation
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