125 to 181 GHz fundamental-wave VCO chips in SiGe technology
Radio Frequency Integrated Circuits Symposium（2012）
摘要
This paper presents four signal-generation chips that comprise a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a divide-by-32 prescaler. The VCOs with contiguous tuning ranges cover almost the full waveguide band from 110 to 170GHz (D-band). The fastest VCO operates at up to 181GHz in combination with the prescaler. The VCOs run on 1.8V, draw ~35 mA, and achieve a single-sideband phase noise ranging from -92 to -82 dBc/Hz at 1MHz offset frequency. Power consumption of the high-speed frequency divider in the first prescaler stage is 70mW. The circuits are based on an Infineon SiGe technology, which features HBTs with an fmax of 340 GHz.
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关键词
ge-si alloys,frequency dividers,millimetre wave oscillators,phase noise,prescalers,semiconductor materials,signal generators,voltage-controlled oscillators,d-band,hbt,sige,buffer,divide-by-32 prescaler,frequency 110 ghz to 170 ghz,frequency 125 ghz to 181 ghz,frequency 340 ghz,full waveguide band,fundamental-wave vco chips,fundamental-wave voltage-controlled oscillator,high-speed frequency divider,power 70 mw,power consumption,signal-generation chips,single-sideband phase noise,voltage 1.8 v,heterojunction bipolar transistor (hbt),sige hbt,millimeter-wave integrated circuits,regenerative frequency divider,voltage-controlled oscillator,d band,radio frequency,tuning,voltage controlled oscillator
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