InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near

Guangle Zhou,Yeqing Lu,Rui Li,Qin Zhang,Qingmin Liu,Tim Vasen,Haijun Zhu,Jennming Kuo,T H Kosel,Mark A Wistey,Patrick Fay,Alan Seabaugh,Huili Xing

Electron Device Letters, IEEE（2012）

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摘要

Vertical n-channel tunnel field-effect transistors (TFETs) with tunneling normal to the gate based on an n+ In∞=0.53->;1GaAs/p+ InP heterojunction have been demonstrated to exhibit simultaneously a high ION/IOFF ratio of 6 × 105, a minimum subthreshold swing (SS) of 93 mV/dec, and an on-current of 20 μA/μm at VDS = 0.5 V and a gate swing of 1.75 V at 300 K, a record TFET performance. The significant improvement in device performance is ascribed to the adoption of a thin equivalent oxide thickness (EOT) of ~1.3 nm for improved electrostatics and the use of plasma-enhanced chemical vapor deposition SiN∞ mesa passivation to preserve the integrity of the thin exposed semiconductor layers.

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关键词

field effect transistors,passivation,ingaas-inp,electrostatics,equivalent oxide thickness,heterojunction,mesa passivation,minimum subthreshold swing,plasma-enhanced chemical vapor deposition,semiconductor layer,temperature 300 k,tunnel fet,tunneling normal,v,vertical n-channel tunnel field effect transistors,voltage 0.5 v,voltage 1.75 v,ingaas,inp,metal–oxide–semiconductor field-effect transistors (mosfets),nanoelectronics,subthreshold swing,transistors,tunnel field-effect transistor (tfet),tunneling,plasma enhanced chemical vapor deposition,logic gates

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