A 0.5 watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier

K W Kobayashi,A K Oki,Liw Yang,Augusto Gutierrezaitken,P Chin,Donald Sawdai,W Okamura, J A Lester,E Kaneshiro, P C Gorssman,K Sato,T Block,H C Yen,D C Streit

Williamsburg, VA（2000）

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摘要

We report on the first InP DHBT K-band fully integrated power amplifier which achieves 0.5 Watts of output power and 40% power added efficiency (PAE). The power DHBTs obtain a BVceo >18 V and an fT and fmax of 80 GHz and 160 GHz, respectively. The MMIC amplifier combines eight 1.5×30 μm2 emitter fingers for a total periphery of 360 μm2. At 21 GHz the MMIC power amplifier achieves a linear gain of 9.4 dB, output power of 27 dBm with a 40% PAE. The amplifier was operated under a Vce=5.5V and Jc=54 KA/cm 2 and obtained a corresponding power density of 1.4 mW/μm 2. To our knowledge this is the highest output power obtained for a fully monolithic-50-Ω-matched MMIC power amplifier based on InP HBT technology

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关键词

iii-v semiconductors,mmic power amplifiers,bipolar mimic,bipolar mmic,heterojunction bipolar transistors,indium compounds,integrated circuit measurement,millimetre wave measurement,millimetre wave power amplifiers,power bipolar transistors,0.5 w,1.5 mum,160 ghz,18 v,21 ghz,30 mum,40 percent,5.5 v,50 ohm,80 ghz,9.4 db,inp,inp dhbt k-band fully integrated power amplifier,inp hbt technology,inp double heterojunction bipolar transistor k-band mmic power amplifier,mmic amplifier,mmic power amplifier,emitter fingers,linear gain,monolithic-50-ω-matched mmic power amplifier,output power,power dhbts,power added efficiency,power density,power amplifier,k band,gain,power generation

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