Improved Y-factor method for wide-band on-wafer noise-parameter measurements
IEEE Transactions on Microwave Theory and Techniques（2005）
摘要
A new noise-figure measurement method, which combines the simplicity of the "classical" Y-factor method with the accuracy of the widely used "cold noise-source" method, is reported. Implemented in our fully automated wide-band 1-18-GHz on-wafer noise-parameter measurement system, accurate results are obtained using a small set of precharacterized source impedances. We illustrate our method and its accuracy with data taken on a low-noise GaAs pseudomorphic high electron-mobility transistor device, and quantify the impact of the instrumental uncertainties on the extracted noise parameters.
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关键词
III-V semiconductors,UHF measurement,electric noise measurement,gallium arsenide,high electron mobility transistors,microwave measurement,semiconductor device noise,1 to 18 GHz,GaAs,Y-factor method,cold noise-source method,high electron-mobility transistor,integrated circuits,noise-figure measurement method,on-wafer microwave noise measurement,reverse error analysis,source impedance,wide-band noise-parameter measurement,Calibration,deembedding,integrated circuits,on-wafer microwave noise measurements,reverse error analysis
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