Silicon-based RF ICs up to 100 GHz: research trends and applications

Werner Simburger,K Aufinger, J J Bock,S Boguth,D Kehrer,Christoph Kienmayer,Herbert Knapp,T F Meister,W Perndl,M Rest, Herbert Schafer,R Schreiter,Reinhard Stengl, R Thuringer,Marc Tiebout, H D Wohlmuth,M Wurzer,Al Scholtz,Christoph Sandner

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference（2004）

引用 16|浏览5

暂无评分

摘要

This paper presents recent advances in circuit design which evaluate the high-speed and low-power potential of state-of-the-art CMOS and SiGe bipolar technologies. In 0.13 μm CMOS a 17 GHz ISM/WLAN RF front-end with only 130 mW power consumption is described. An injection locked frequency divider with a power consumption as low as 3 mW at 40 GHz is presented. A fully integrated 2:1 multiplexer IC which operates up to 50 Gb/s data rate has been realized in CMOS. A 100 Gbit/s amplifier in a 200 GHz/275 GHz fT/fmax SiGe bipolar technology with 16 dB gain has been realized. Finally, a 65 GHz - 95 GHz double-balanced mixer for 77 GHz automotive radar applications is discussed.

查看译文

关键词

cmos integrated circuits,ge-si alloys,bipolar mimic,elemental semiconductors,frequency dividers,millimetre wave amplifiers,millimetre wave integrated circuits,millimetre wave mixers,millimetre wave receivers,power consumption,road vehicle radar,wireless lan,0.13 micron,100 gbit/s,130 mw,16 db,17 ghz,3 mw,40 ghz,50 gbit/s,65 to 95 ghz,ism/wlan rf front-end,sige bipolar technology,automotive radar applications,circuit design,double-balanced mixer,injection locked frequency divider,multiplexer ic,silicon-based rf ic,state-of-the-art cmos,injection locking,front end

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要