Sige Hbts For Millimeter-Wave Applications With Simultaneously Optimized F(T) And F(Max) Of 300 Ghz

Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs with simultaneously optimized f(T) and f(max) of > 300 GHz are developed. To the author's knowledge, this is the first report of f(T) and f(max) both exceeding 300 GHz for any Si-based transistor. BVCEO and BVCBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F-min of 0.45 dB and 1.4 dB at 10GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.