Direct measurement of stress-induced void growth by thermal wave modulated optical reflectance image

New Orleans, LA, USA(1990)

引用 19|浏览3
暂无评分
摘要
Thermal wave modulated optical reflectance imaging, for imaging stress-induced voids in metallization, is described. This method nondestructively detects, with submicron resolution, voids within metallization without removal of the stress-originating passivation layers. The width, area, location, and a thickness parameter for each void are measured after heat treatment at 673 K for various times. All voids in a selected field of view are automatically labeled and measured at each time step. This removes the tedium of manually measuring individual voids and greatly increases void growth statistics. These statistics are then compared with a stress-driven diffusive model of void growth. This nondestructive technique has allowed observation of two new stress-void phenomena: a growth process akin to Ostwald ripening and the physical movement and agglomeration of voids.<>
更多
查看译文
关键词
vlsi,aluminium,crack detection,failure analysis,measurement by laser beam,metallisation,nondestructive testing,photothermal effects,673 k,al metallisation,ndt,ostwald ripening,agglomeration of voids,direct measurement,growth process,heat treatment,imaging stress-induced voids,metallization,nondestructive technique,physical movement,stress-driven diffusive model,stress-induced void growth,stress-originating passivation layers,stress-void phenomena,submicron linewidths,submicron resolution,subsurface voids,thermal wave modulated optical reflectance image,voids within metallization
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要