Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer
Electron Devices, IEEE Transactions (2014)
摘要
In this paper, we investigate sputtered physical vapor deposition (PVD) AlN nucleation layer effects on crystal quality and efficiency of GaN-based light-emitting diodes (LEDs) prepared on high-aspect ratio patterned sapphire substrate (HARPSS). The crystal quality of the GaN epitaxial layer prepared on HARPSS with a PVD AlN nucleation layer was significantly better than that with a conventional metal organic chemical vapor deposition (MOCVD)-grown AlN nucleation layer. In addition, the pure wurzite structure GaN prepared on HARPSS could be obtained using PVD AlN nucleation layer. With the PVD AlN nucleation layer, the 20-mA LED light output power of the LEDs can be enhanced by 47.7% compared with the LEDs with the conventional MOCVD-grown AlN nucleation layer.
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关键词
iii-v semiconductors,aluminium compounds,crystal structure,gallium compounds,light emitting diodes,nucleation,sapphire,semiconductor epitaxial layers,sputter deposition,al2o3,aln,efficiency,gan-al2o3,harpss,led,mocvd,pvd,crystal quality,current 20 ma,high-aspect ratio patterned sapphire substrate,metal organic chemical vapor deposition,pure wurzite structure,spatial correlation,sputtered aln nucleation layer,sputtered physical vapor deposition,gan,light-emitting diodes (leds),patterned sapphire substrate (pss),physical vapor deposition (pvd),physical vapor deposition (pvd).,crystals,temperature measurement
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