High mobility w-gate nanowire P-FET on cSGOI substrates obtained by Ge enrichment technique

Phuong Nguyen,S Barraud,Masanori Koyama,M Casse,F Andrieu,C Tabone, F Glowacki,J M Hartmann,V Maffinialvaro, D Rouchon,N Bernier,D Lafond,M P Samson,F Allain,C Vizioz,D Delprat,B Y Nguyen,C Mazure, O Faynot,Maud Vinet

SOI-3D-Subthreshold Microelectronics Technology Unified Conference（2014）

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摘要

Ω-gate nanowires (NW) P-FETs on compressively-strained-SiGe-on-insulator (cSGOI) substrate obtained by the Ge enrichment technique are presented. Effectiveness of cSGOI channel is demonstrated for ultra-scaled P-FET NW (LG=15nm and WNW=25nm) with an outstanding ION current (ION=860μA/μm at IOFF=140nA/μm) and a good electrostatics immunity (DIBL=110mV/V). For the first time, Si0.8Ge0.2-channel transistors highlight a mobility improvement for narrow NWs down to short gate length compared to Si one (92% for LG=30nm). The hole mobility improvement provided by the strong uniaxial compressive strain coming from cSiGe and cCESL leads to an ION current improvement of 95% at LG=15nm.

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关键词

ge-si alloys,electrostatics,field effect transistors,germanium,hole mobility,nanowires,semiconductor-insulator boundaries,substrates,csgoi channel,csgoi substrate,channel transistor,compressive strain,compressively-strained silicon germanium-on-insulator substrate,electrostatics immunity,field effect transistor,gate length,germanium enrichment technique,high mobility ω-gate nanowire pfet,ultrascaled p-fet nw

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