Reduction of the normal-superfluid transition temperature in gated bilayer graphene

Computational Electronics（2014）

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摘要

We show that the normal-superfluid transition in bilayer graphene (BLG) predicted to occur at high temperature is strongly affected not only by the dielectric constants of the insulators, but also by the proximity of ideal metal gates. Even assuming optimistically an unscreened interlayer Coulomb interaction, we find that for a gate-insulator thickness smaller than 2-to-5 nm of equivalent SiO2 thickness, the transition temperature is depressed to the 1 K-1 mK range. Thus, thicker and low-κ gate insulators are required to design transistors exploiting the properties of the superfluid state.

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关键词

bose-einstein condensation,graphene,permittivity,superfluidity,sio2-c,dielectric constants,gate-insulator thickness,gated bilayer graphene,ideal metal gate proximity,low-κ gate insulators,normal-superfluid transition temperature reduction,superfluid state,transistor design,unscreened interlayer coulomb interaction,bisfet,logic gates,insulators,geometry,bose einstein condensation,dielectric constant

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