Single-layer graphene field-effect transistors with ferroelectric PZT gate

Single-layer graphene (SLG) was transferred onto lead-zirconate-titanate (PZT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The SLG FETs with PZT gate exhibited p-type characteristics with a large memory window of about 5.65V and an on/off current ratio of about 4.7 when Vgmax was 6V. The ferroelectric gate graphene field-effect transistors (Fe-GFETs) exhibit enhanced stability through a bi-stable current state operation with long retention time. The trapping/de-trapping of charge carriers in the interface states and the polarization screening from water molecules located between graphene and PZT are proposed to be responsible for the anti-hysteresis behaviors of the Fe-GFETs.