Realizing multimode of resistive switching in single Ag/SiO2/Pt device via tuning forming compliance current
VLSI Technology, Systems and Application（2014）
摘要
Coexistence of volatile threshold switching (TS) and nonvolatile memory switching (MS) behaviors are achieved in a single Ag/SiO2/Pt device. After positive forming with high compliance current (ICC), a conductive filament (CF) consisting of continuous Ag nanocrystals is formed in the device, and the device shows bipolar MS behavior under positive SET and negative RESET. After positive forming process with low ICC, a CF consisting of discrete Ag nanocrystals is formed. The device shows two types of resistive switching behaviors based on the subsequent operation condition. Under low ICC condition, the device shows symmetrical TS in the positive and negative voltage loops. Interesting, when removing the ICC, a unipolar MS with negative differential resistance (NDR) characteristic is observed under negative voltage loop. In addition, the unipolar MS shows good performances, including high uniformity, high reliability and multilevel storage potential.
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关键词
circuit tuning,platinum,random-access storage,silicon compounds,silver,Ag-SiO2-Pt,CF,NDR characteristic,TS,bipolar MS behavior,conductive filament,continuous silver nanocrystals,discrete silver nanocrystals,multilevel storage potential,negative RESET,negative differential resistance characteristic,negative voltage loop,nonvolatile memory switching,positive SET,positive forming process,positive voltage loops,reliability,resistive switching behaviors,symmetrical TS,tuning forming compliance current,volatile threshold switching
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