Patterning and metallization of silicon solar cells by inkjet-printed functional ink on a photoresist layer

Photovoltaic Specialist Conference(2014)

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摘要
This paper reports a patterning and metallization method for silicon solar cells fabrications. Patterning was achieved by the inkjet printing of a dye-based ink as a mask to protect the photoresist from UV-light initiated crosslinking. The patterned photoresist was used to facilitate the etching of a pattern in the underlying dielectric layer and also to act as a metal plating mask. This method resulted in fine point openings in the photoresist layer with a diameter of 15 μm and line openings with a width of 30 μm. Nickel/copper plated homogeneous emitter silicon solar cells with an efficiency of 18.2% on small size Cz wafers were fabricated using this method, may find applications in the metallization of future heterojunction, rear contact and PERC cells.
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copper,elemental semiconductors,etching,ink jet printing,integrated circuit metallisation,masks,nickel,photoresists,silicon,solar cells,ni-cu,perc cells,uv-light initiated crosslinking,dielectric layer,dye-based ink,efficiency 18.2 percent,inkjet-printed functional ink,metal plating mask,nickel-copper plated homogeneous emitter silicon solar cells,pattern etching,photoresist layer,silicon solar cell metallization method,silicon solar cell patterning,size 15 mum,size 30 mum,small size cz wafers,inkjet,metallization,patterning,photolithography,photovoltaic cells,resists
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