A V and E-band packaged direct-conversion transceiver chipset for mobile backhaul application in SiGe technology
Microwave Conference（2014）
摘要
In this paper three chipsets for mobile backhaul application in the V and E-band are presented. The chips are fabricated in a 170GHz fT SiGe production technology and housed in a wafer level package, eWLB. The three devices share the same silicon front-end. They show the same size, same architecture, and same pin interface. Thus, they enable cost efficient system designs from 57 up 86GHz. Moreover, for the first time, a packaged device is used in those wireless applications up to 86GHz. The transceiver chip features a push-push VCO showing a PNssb lower than -80dBc/Hz at 100kHz offset in the whole frequency range of interest. The NF of the Rx is lower than 8dB, including the loss of the package. Supplied with 3.3V, the chip consumes 1.6W in Tx mode and 1.1W in Rx mode.
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关键词
sige,wafer level packaging,ewlb,transceiver chip features,broadband,SiGe production technology,silicon front-end,sige production technology,pin interface,wafer level package,backhaul,SiGe,voltage-controlled oscillators,mm-Wave,frequency 100 khz,mm-wave,millimetre wave oscillators,Wireless,packaged device,wireless applications,voltage 3.3 V,wireless,eWLB,direct-convertsion transceiver chipset,wireless application,push-push VCO,frequency 86 GHz,mobile radio,cost efficient system design,voltage 3.3 v,radio transceivers,power 1.1 w,push-push vco,rx mode,V-band,silicon compounds,Broadband,Backhaul,Ge-Si alloys,frequency 170 ghz,tx mode,frequency 170 GHz,v-band packaged direct conversion transceiver chipset,e-band packaged direct conversion transceiver chipset,mobile backhaul application,power 1.6 W,power 1.1 W,power 1.6 w,E-band
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