Strained Si1-Xgex-On-Insulator Pmos Finfets With Excellent Sub-Threshold Leakage, Extremely-High Short-Channel Performance And Source Injection Velocity For 10nm Node And Beyond

We demonstrate high performance (HP) s-SiGe pMOS finFETs with I-on/I-eff of similar to 1.05/0.52mA/mu m and similar to 1.3/0.71mA/mu m at I-off=100nA/mu m at V-DD=0.8 and 1V, extremely high intrinsic performance and source injection velocity. Compared to earlier work, an optimized process flow and a novel interface passivation scheme, result in similar to 30% mobility enhancement and dramatic sub-threshold-swing reduction to 65mV/dec. We also demonstrate the most aggressively scaled s-SiGe finFET reported to date, with W-FIN similar to 8nm and L-G similar to 15nm, while maintaining high current drive and low leakage. With their very low GIDL-limited I-D, (min) and more manufacturing-friendly process compared to high-Ge content SiGe devices, as well as impressive I-on similar to 0.42mA/mu m at I-off = 100nA/mu m and g(m), (int) as high as 2.4mS/mu m at V-DD=0.5V, s-SiGe finFETs are strong candidates for future HP and low-power applications.