Characterization and modeling of ESD diodes in RF circuits
Lexington, KY（2014）
摘要
This paper presents the characterization of diode arrays fabricated in IBM's 0.18um CSOI7RF technology under both ESD and Radio Frequency (RF) test conditions. For the ESD characterization, HBM and TLP measurements and simulations are conducted and discussed in detail. For the RF characterization, the small signal and large signal responses are both measured and simulated. The primary focus is the diode array loading capacitance which is extracted from the small signal S-Parameters, and the harmonic power which is measured at both even and odd harmonics during a 900MHz power sweep. This research focuses on the connection between asymmetry in the diode structures (mismatch) and the even harmonic responses of bi-directional shunted ESD diode connected circuits.
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关键词
s-parameters,electrostatic discharge,integrated circuit modelling,integrated circuit testing,radiofrequency integrated circuits,semiconductor diodes,esd diode characterization,esd diode modeling,esd test condition,hbm measurement,ibm csoi7rf technology,rf circuits,rf test condition,tlp measurement,bi-directional-shunted esd diode connected circuits,diode array characterization,diode array loading capacitance,diode structures,even harmonic response,frequency 900 mhz,harmonic power,large-signal response,odd harmonics,power sweep,radiofrequency test condition,size 0.18 mum,small-signal s-parameters,small-signal response,esd,hbm,rfic modeling and characterization,soi,tlp,tv,harmonic analysis,radio frequency,s parameters
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