An electrostatically doped planar device concept

Tillmann Krauss,Frank Wessely,Schwalke, U.

Design & Technology of Integrated Systems In Nanoscale Era（2014）

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摘要

In this paper, we propose and demonstrate by simulation an electrostatically doped and therefore voltage-programmable planar field-effect-transistor (FET) structure which is based on our results of already published Si-nanowire (SiNW) devices. The key technology for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) platform. The desired transistor type, i.e. NFET or PFET, is selectable on the fly by applying an appropriate control-voltage which significantly enhances flexibility in design of integrated circuits.

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关键词

Schottky gate field effect transistors,electrostatic devices,semiconductor junctions,silicon-on-insulator,FET structure,NFET,PFET,SOI platform,Schottky S-D junctions,SiNW devices,control-voltage,dual-gated general purpose FET,electrostatically doped planar device concept,integrated circuit design,silicon-nanowire devices,silicon-on-insulator platform,voltage-programmable planar field-effect-transistor,SOI,ambipolar,electrostatic doping,reconfigurable,voltage-programmable

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