Dynamic-state model of an NPT-IGBT with localized lifetime control

A novel dynamic-state model of an NPT-IGBT with localized lifetime control is proposed and is verified by the 2D simulator MEDICI. In this model, the quasi-static-state approximation is used, and the turn-off stage is divided into two stages, including a fast turn-off and a slow turn-off, to characterize the turn-off. With this model, the dynamic characteristics of a localized lifetime control NPT-IGBT, as influenced by the parameters of the localized low-lifetime region, are discussed in detail. This model is helpful for understanding the physical mechanisms in an NPT-IGBT with localized lifetime control during the turn-off period and can be used to the direct design and optimization of an NPT-IGBT. The modeling and analysis methods used here are universal and also can be used in other conductivity modulation power devices.