Defect tolerance at the end of the roadmap

Nano, quantum and molecular computing(2003)

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摘要
As feature sizes shrink closer to single digit nanometer dimensions, defect tolerance will become increasingly important. This is true whether the chips are manufactured using top-down methods, such as photolithography, or bottom-up assembly processes such as Chemically Assembled Electronic Nanotechnology (CAEN). In this chapter, we examine the consequences of this increased rate of defects, and describe a defect tolerance methodology centered around reconfigurable devices, a scalable testing method, and dynamic place-and-route. We summarize some of our own results in this area as well as those of others, and enumerate some future research directions required to make nanometer-scale computing a reality.
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关键词
chemically assembled electronic nanotechnology,defect tolerance,own result,bottom-up assembly,feature size,future research direction,reconfigurable device,dynamic place-and-route,defect tolerance methodology,increased rate,top down,chip,place and route,switches,manufacturing,bottom up,field programmable gate arrays,lithography,test methods
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