An Effective Model Of The Overshooting Effect For Multiple-Input Gates In Nanometer Technologies

With the scaling of CMOS technology into the nanometer regime, the overshooting effect is more and more obvious and has a significant influence to gate delay and power consumption. Recently, researchers have already proposed the overshooting effect models for an inverter. However, the accurate overshooting effect model for multiple-input gates is seldom presented and the existing technology to reduce a multiple-input gate to an inverter is not useful when modeling the overshooting effect for multiple-input gates. Therefore, modeling the overshooting effect for multiple-input gates is proposed in this paper. Firstly, a formula-based model is presented for the overshooting time of 2-input NOR gate. Then, more complicated methods are given to calculate the overshooting time of 3-input NOR gate and other multiple-input gates. The proposed model is verified to have a good agreement, within 3.4% error margin, compared with SPICE simulation results using CMOS 32 nm PTM model.