Experimental Characterization Of The Cyclostationary Low-Frequency Noise Of Microwave Semiconductor Devices Under Large Signal Operation

INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES(2010)

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摘要
This paper presents a detailed experimental analysis of the cyclostationary properties of low-frequency (LF) noise sources of microwave bipolar devices, in order to improve the LF noise description in compact models. Such models are used to help designers on predicting circuit performances such as phase and amplitude noise in oscillators. We start by reviewing the most relevant experimental and simulation results on the subject, and then investigate the model of conductance fluctuations proposed to explain the 1/f noise of carbon resistors. This simple linear case serves as a basis for understanding the complex case of a non-linear device under large-signal periodic operation. We then present the large-signal small-signal analysis of a pumped junction, focusing on the process of converting the fundamental LF noise process, a current fluctuation, into voltage fluctuations. We show why a stationary noise model would lead to an increase of the voltage noise observed around DC when the device is pumped, while the voltage noise would decrease if a cyclostationary model was used. A great amount of experimental data is presented not only to support our analysis, but also as a mean to distinguish between the two noise processes under consideration: stationary or cyclostationary. The goal of our noise measurement technique was to maximize the difference between those two concepts. Throughout the paper, we revisit some known concepts and show how some experimental results may lead to misinterpretations.
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关键词
1/f noise, Cyclostationarity, Parametric effect, Microwave semiconductor devices
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