Dependency of 1/f Noise on Initial Oxidation Method in Nano-CMOS Technology

In this paper, it is presented that flicker (1/f) noise of ultra thin gate oxide can be improved by initial oxidation and subsequent plasma nitridation(PN). PN which raises Nitrogen peak upward from the Si/Oxide interface to gate polysilicon/Oxide interface is adopted mainly to improve the life time such as Negative-Bias Temperature Instability (NBTI) and hot carrier in Nano CMOS technology. Three different types of initial oxidation prior to plasma nitridation are investigated. One is slow thermally grown oxide(STO) in very small Oxygen ambient, another is rapid thermally grown oxide(RTO) and the other is grown in Nitrous oxygen ambient (NO). Oxide thickness of all splits is about 14.5 angstrom Then, it is shown that STO has the lowest drain current noise power (S-id) among the splits. The interface trap densitie (D-it) of each oxide is characterized using charge pumping method. Finally, we reached a conclusion that the IN noise can be significantly reduced by initial STO and Plasma Nitridation in Nano CMOS technology.