A 90 nm CMOS dual-band divide-by-2 and -4 injection-locked frequency divider

A fourth-order resonator has been implemented to design a 65 GHz injection-locked frequency divider (ILFD) implemented in a 90 nm CMOS process. The ILFD is realized with a cross-coupled nMOS LC-tank oscillator with an inductor switch for frequency band selection. The LC tank can be a second-or fourth-order resonator depending upon the on/off state of a switch across a series-rioted inductor. Measurement results show that at the supply voltage of 0.5 V. the free-running frequency is from 8.68 (16.147) to 9.928 (17.89) GHz for the low(high-) frequency band. The divide-by-2 operational locking range is from 14.9 (30.64) to 22.2 (37.74) GHz for the low-(high)frequency band. The divide-by-4 operational locking range is from 34.4 (64.6) to 40.35 (67) GHz Pr the low-(high)-frequency), band. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1421-1425, 2010: Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25217