Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs
Microelectronic Engineering(2011)
摘要
In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height is calculated to be 0.829eV from Schottky emission model. Fowler-Nordheim tunneling barrier height was 0.941eV at high electric field regions and the trap energy level extracted using Frenkel-Poole emission model was 0.907eV. From the deviation of weak temperature dependence for gate leakage current at low electric field region, TAT mechanism is also considered.
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关键词
fowler-nordheim tunneling barrier height,schottky barrier height,high electric field region,frenkel-poole emission model,gate current,schottky emission model,metal gate,tat mechanism,gate leakage,carrier transport mechanism,schottky emission,la-incorporated high-k dielectric,energy levels,leakage current,high k,electric field
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