Stochastic power/ground supply voltage prediction and optimization via analytical placement

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2007)

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摘要
Increasingly significant power/ground (P/G) supply voltage degradation in nanometer VLSI designs leads to system performance degradation and even malfunction, which requires stochastic analysis and optimization techniques. We represent the supply voltage degradation at a P/G node as a function of the supply currents and the effective resistance of a P/G supply network and propose an efficient stochastic system-level P/G supply voltage prediction method, which computes P/G supply network effective resistances in a random walk process. We further propose to reduce P/G supply voltage degradation via placement of supply current sources, and integrate P/G supply voltage degradation reduction with conventional placement objectives in an analytical placement framework. Our experimental results show that the proposed stochastic P/G supply network prediction method achieves 10×-100× speedup compared with traditional SPICE simulation, and the proposed P/G supply voltage degradation aware placement achieves an average of 20.9% (11.7%) reduction on maximum (average) supply voltage degradation with only 4.3 % wirelength increase.
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关键词
g supply voltage degradation,analytical placement,stochastic power,g supply network prediction,supply voltage degradation,voltage degradation,supply current,proposed p,ground supply voltage prediction,g supply network,g node,supply current source,g supply voltage prediction,programmable logic devices,vlsi,network effect,stochastic processes,random walk,stochastic analysis,vlsi design,optimization,infrared,integrated circuit design,degradation,system performance
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