Characterization and modeling of run-time techniques for leakage power reduction

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2004)

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摘要
While some leakage power reduction techniques require modification of the process technology, others are based on circuit-level optimizations and are applied at run-time. We focus our study on the latter and compare three techniques: input vector control, body bias control, and power supply gating. We determine their limits and benefits in terms of the potential leakage reduction, performance penalty, and area and power overhead. The leakage power savings trends considering technology scaling are also presented. Due to the differences in the properties of datapath logic and memory structures, different implementations are recommended. Finally, the use of the "minimum idle time" parameter, as a metric for evaluating different leakage control mechanisms, is showed.
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关键词
body bias control,potential leakage reduction,different leakage control mechanism,power overhead,leakage power savings trend,power supply gating,leakage power reduction technique,different implementation,input vector control,process technology,run-time technique,threshold voltage,circuits,cmos technology,very large scale integration,vlsi,fabrication,leakage current,logic circuits
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