Scalable InGaN Nanowire Μ-Leds: Paving the Way for Next-Generation Display Technology
National science review(2024)
Abstract
Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays,from micro-electronic displays to large video walls.InGaN nanowires,with features like high electron mobility,tunable emission wavelengths,durability under high current densities,compact size,self-emission,long lifespan,low-power consumption,fast response,and impressive brightness,are emerging as the choice of micro-light emitting diodes(μLEDs).However,challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.Consequently,research is increasingly focused on scalable InGaN nanowire μLEDs representing a transformative advancement in display technology,particularly for next-generation applications such as virtual/augmented reality and high-speed optical interconnects.This study presents recent progress and critical challenges in the development of InGaN nanowire μLEDs,highlighting their performance and potential as the next-generation displays in consumer electronics.
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Key words
GaN,multi-quantum well,nanowire,micro LED,display,AR/VR/MR
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