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Scalable InGaN Nanowire Μ-Leds: Paving the Way for Next-Generation Display Technology

Vignesh Veeramuthu,Sung-Un Kim, Sang-Wook Lee, R Navamathavan,Bagavath Chandran,Dae-Young Um,Jeong-Kyun Oh, Min-Seok Lee, Yong-Ho Kim,Cheul-Ro Lee,Yong-Ho Ra

National science review(2024)

Cited 1|Views7
Abstract
Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays,from micro-electronic displays to large video walls.InGaN nanowires,with features like high electron mobility,tunable emission wavelengths,durability under high current densities,compact size,self-emission,long lifespan,low-power consumption,fast response,and impressive brightness,are emerging as the choice of micro-light emitting diodes(μLEDs).However,challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.Consequently,research is increasingly focused on scalable InGaN nanowire μLEDs representing a transformative advancement in display technology,particularly for next-generation applications such as virtual/augmented reality and high-speed optical interconnects.This study presents recent progress and critical challenges in the development of InGaN nanowire μLEDs,highlighting their performance and potential as the next-generation displays in consumer electronics.
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GaN,multi-quantum well,nanowire,micro LED,display,AR/VR/MR
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要点】:本文介绍了InGaN纳米线微发光二极管(µLEDs)的研究进展和关键挑战,指出其在下一代显示技术中的潜力和应用前景。

方法】:研究聚焦于InGaN纳米线的生长及其在高性能µLEDs中的应用,利用了纳米线的优异特性如高电子迁移率、发射波长可调谐、高电流密度下的稳定性等。

实验】:实验通过解决晶体质量和高晶格失配问题,在具有不同晶体结构的衬底上实现了可扩展的InGaN纳米线µLEDs,具体数据集名称和结果未在摘要中提及。