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Design and Demonstration of a Temperature-Resistant Aptamer Structure for Highly Sensitive Mercury Ion Detection with Biofets

Talanta(2025)SCI 2区

Natl Tsing Hua Univ

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Abstract
In this study, we developed a temperature-resistant aptamer coupled with extended gate electric double-layer Field-Effect Transistors (FETs) for highly sensitive mercury ion detection. The design of the temperature- resistant aptamer is based on the thermal and structural properties of the hairpin structure. Two aptamer sequences were designed with different melting temperatures (Tm) and compared for their sensitivity. The hairpin structure of the aptamer with a high melting temperature ensures the stable structure prior to the addition of the mercury ions, which allows the formation of thymine-mercury-thymine (T-Hg2+-T) complex in low concentrations of mercury ions. High sensitivity and low detection limit are achieved at elevated temperatures with the aptamer having a high melting temperature. The elevated temperature facilitates the reaction rate, resulting in high sensitivity and a low detection limit. The aptamer with a high melting temperature hairpin structure has shown a remarkable improvement in the limit of detection with a 4 orders of magnitude increase compared to the one with a low melting temperature. The sensor with the high melting temperature aptamer shows an extremely low detection limit of 4.68 x 10 _ 12 M, surpassing previously reported results. The aptamer with a low melting temperature requires mercury ions to stabilize the hairpin structure by forming a T-Hg2+-T complex. The results show that if the melting temperature is lower than the ambient temperature, it is very difficult to detect low concentrations of mercury ions at the ambient temperature. The selectivity of this sequence was also tested against multiple heavy metals, including arsenic (As), lead (Pb), chromium (Cr), and cadmium (Cd) ions. This study has shown how the structural and thermal properties of the aptamer, and the ambient temperature affect the sensitivity. They are strongly correlated to the performance of the sensors and need to be considered in the design of the sequence.
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FET,Electric double-layer,Mercury ions,Aptamer,T-Hg2+-T
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要点】:本研究开发了一种耐高温的适配体结构,结合扩展栅电双层场效应晶体管(FETs),实现了高灵敏度的汞离子检测。

方法】:通过设计具有不同熔解温度(Tm)的两个适配体序列,并利用其热稳定性和结构特性,实现了在低汞离子浓度下的敏感检测。

实验】:实验使用扩展栅电双层场效应晶体管(FETs)进行检测,数据集名称未提及,结果显示,高熔解温度的适配体结构在汞离子检测上具有显著优势,其检测限比低熔解温度的适配体低4个数量级,达到了4.68 x 10^-12 M,优于之前的研究结果。同时,研究还测试了该适配体序列对多种重金属离子的选择性。