A Computational Model to Understand the Interaction of Nanosecond Pulsed Laser with Ultra-Thin SiNx Layer-Coated Silicon Substrate

Nanosecond lasers can be used for the selective ablation of ultra-thin SiNx layer (80–100 nm) coated on a silicon substrate with applications in the fabrication of PERC solar cells. Experiments reveal that the ablation process can occur in different regimes with material removal in solid, liquid, vapor, and explosion forms. This study investigates the different regimes for single pulse ablation through a physics-based model developed using the finite volume method in Ansys Fluent. The model accounts for various physical phenomena, including laser heating, melting, thermal expansion, thermal decomposition, Marangoni convection, vaporization, plasma formation, melt expulsion, and phase explosion. Experiments were conducted using Nd: YVO4 laser (λ=532 nm, pulse duration = 50 ns), and the measured single pulse crater profiles are in excellent agreement with the model predictions over a broad range of laser fluence. Results show that the SiNx layer breaks due to the thermal expansion of the underlying silicon at lower fluences (3.05–3.35 J/cm2) in a very narrow range. Above this fluence range lies another narrow range (3.35–5.55 J/cm2) wherein the SiNx layer is thermally decomposed into silicon and nitrogen, and craters are formed due to Marangoni convection in the melt pool formed. Ablation due to vaporization occurs in a broad fluence range (5.55–8.4 J/cm2), causing deeper ablation depths and material deposition at the crater edge. At higher fluences (¿8.4 J/cm2), explosive boiling occurs due to homogeneous nucleation, resulting in much higher ablation depths (¿1.6μm), broader crater widths, and poor surface finish. This model provides an understanding of different material removal regimes in laser ablation of SiNx-coated silicon.