Reconfigurable Sensing‐Memory‐Processing and Logical Integration Within 2D Ferroelectric Optoelectronic Transistor for CMOS‐Compatible Bionic Vision

Neuromorphic ferroelectric transistors integrating sensing and memory capabilities for photoelectric stimuli have provided a remarkable platform for multifunctional bionic vision. However, most hardware demonstrations utilizing ferroelectric transistors cannot implement multiple bio-visual functions simultaneously under a small operating voltage with scalable material systems, which reduces the compatibility with complementary metal-oxide-semiconductor (CMOS) technology and blocks further bio-visual applications. Herein, an optoelectronic transistor gated is constructed with ferroelectric LiNbO3, which exhibits sensing-memory-processing functions and logic integration simultaneously under a low operating voltage (approximate to 1.5 V). Benefiting from the programmable photoinduction and strong ferroelectric polarization, the reliable and highly controllable synaptic characteristics and the bio-visual selective learning behavior are successfully demonstrated. A high recognition accuracy (approximate to 94.5%) in simulations is also achieved due to the unique linear synaptic plasticity. Furthermore, based on dual-wavelength modulation, the full-optical logics "AND" and "OR" are established within the same device. This work provides novel opportunities for the complex multifunctional bionic vision and toward large-scale integration compatible with silicon-based CMOS processes. A highly controllable 2D ferroelectric transistor gated with LiNbO3 that exhibits light-electric dual modal modulation is demonstrated to perform sensing-memory-processing and logic functions simultaneously. The strong polarization effect of LiNbO3 and the scalable material system make it possible to operate the device under a CMOS-compatible voltage with great integration potential. image