Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel
2023 International Electron Devices Meeting (IEDM)（2023）
Key words
Transition Metal Dichalcogenides,2D Materials,High Current Density,Contact Length,Gate Length,Scanning Electron Microscopy,Atomic Force Microscopy,Length Scale,Chemical Vapor Deposition,Device Performance,Sapphire,Contact Resistance,Transfer Characteristics,Carrier Density,Si Wafer,Parasitic Capacitance,Integration Of Devices,Gate Dielectric,Single Chip,Gate Stack,Doping Density,Cross-sectional TEM,Physical Thickness,Laboratory Devices
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