2-D Photo-Thermal Distribution and Structures of Flip-Chip Mini Light-Emitting Diodes by Microscopic Hyperspectral Imaging

Given the growing interest in micro-scale thermal management of mini-and micro-light-emitting diodes (LEDs), it is crucial to develop an effective 2-D junction temperature mea-surement method. In this article, the microscopic hyperspectral imaging (mu-HSI) technique has been proposed to probe the 2-D photo-thermal distribution of the flip-chip mini-LEDs. Running on a two-axis rotating platform, mu-HSI is able to directly focus on the epitaxial layer surface (episurface) and lateral side of the LED chips to acquire their 2-D spectral distributions. Subsequently, the full width at half maximum (FWHM) matrix was extracted to deduce the 2-D junction temperature distributions. As a result, the location and temperature distribution of the active layer, i.e., p-n junction, can be determined accurately. The mean temperature of the episurface approximately matches that of the active layer. The Raman shift method was applied to verify the accuracy of the mu-HSI technique. In addition, the extra fine structures as well as temperature distributions of the interface between the episurface and sapphire or electrodes are distinguished and analyzed by this technique. This work offers an effective tool for the quality improvement and thermal management of mini-LEDs.