Exploration and Optimization of Metal Gate Etch Back Process in Advanced Technology Node
2022 China Semiconductor Technology International Conference (CSTIC)（2022）
Key words
chemical reaction mechanism,temperature sensitivity,short-channel pattern loading,long-channel pattern loading,short-channel N-P MOS loading,self-align-contact,metal gate etch back process optimization,complexity process,complex metal gate film stacks,process health,etch profile control,independently etching,two-dimensional etch processes,three-dimensional structure,complex film stack,moderate metal gate composing,FinFET MOS structures,advanced logic technical node,advanced technology node,systematic etch process control,TiN-TaN,W-TiN-TaN,W-HfO2,W-TiN-TaN-HfO2
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