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A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

S. Xia,W. Zhang,Z. Yuan, J. Li, J. Ye, Y. Gu, Y. Miao,C. Li,Y. Deng,A. Shen,H. Lu,Y-F Chen

Materials Today Nano(2021)

引用 3|浏览13
关键词
SiGe alloys,Pseudomorphic layer,Dislocation density,heterostructure,Strain analysis
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