The characteristic of Teledyne e2v CIS 113 CMOS sensors

We report the testing results of the Teledyne e2v CIS 113 CMOS sensor at temperatures from room temperature down to 168K. The CIS 113 sensor is a customized device for the Transneptunian Automatic Occultation Survey (TAOS II) project. The sensor has 1920 × 4608, 16 μm pixels with 8 outputs. The pixels have a 5T design to provide anti-blooming capability with 18 μm thick high resistivity epitaxial silicon. The sensor provides two parallel and eight serial registers so the region of interests can be addressed and rapidly read out separately through different output channels. More than one thousand 8 × 8 star boxes can be sampled at a frame rate higher than 20 Hz. With a package similar to large format Teledyne e2v CCDs, the CIS 113 is three-side buttable. The device shows peak QE about 77% in 500-600 nm, readout noise around 3eand dark current lower than 2 e-/s/pix at -40 ℃. The linear full well for the device is higher at lower temperature and it is about 14400 e- at temperature lower than 210K. The device performance meets the science requirements with the operation temperature around 200K for TAOS II.