Improved Self-Curing Effect in a MOSFET with Gate Biasing
IEEE Electron Device Letters（2021）
Korea Adv Inst Sci & Technol KAIST
Abstract
Stress-induced damage in a MOSFET can be cured by Joule heating, which can be produced by an intentional forward junction current ( ${I}_{\textbf {FWD}}$ ). This curing effect can be further enhanced by the simultaneous application of gate biasing, which does not influence the ${I}_{\textbf {FWD}}$ . A MOSFET was intentionally degraded by harsh hot-carrier injection (HCI) then the damage was cured and nearly returned to its pristine state. The improved self-curing effect was quantitatively verified using low-frequency noise (LFN) analyses. Self-curing by internal heat from the ${I}_{\textbf {FWD}}$ more effectively cured the HCI damage than a nonself-curing using external heat from a hot chuck.
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Key words
Forward junction current,gate biasing,hot-carrier injection,joule heat,low-frequency noise (LFN),metal-oxide-semiconductor field-effect transistor (MOSFET),self-curing
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