亚阈值数字标准单元库设计
Qutlook of Electronic Technology（2018）
Abstract
基于对0.18μm标准CMOS工艺的研究,本文设计了一套完备的电源电压为0.4 V的亚阈值数字标准单元库.设计流程包括工艺研究与方案设计、单元设计与物理实现、库文件的提取以及单元库验证.提出了传统沟道宽度调节与沟长偏置相结合的尺寸调整策略,有效增强PMOS管驱动并减小漏电流,提升库单元稳定性.利用ISCAS基准测试电路完成亚阈值标准单元库的验证,0.4 V电压下,相同设计,基于亚阈值数字标准单元库的设计的相比于基于商用库的设计,能耗减小20％以上,数据延时也有所减小,即亚阈值标准单元库性能明显优于商用库相比.
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