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A Discrete Core-Shell-like Micro-Light-emitting Diode Array Grown on Sapphire Nano-Membranes

Scientific Reports(2020)

Department of Materials Science and Engineering

Cited 17|Views55
Abstract
A discrete core-shell-like micro-light-emitting diode (micro-LED) array was grown on a 100 nm-thick sapphire nano-membrane array without harmful plasma etching for chip singulation. Due to proper design for the sapphire nano-membrane array, an array of multi-faceted micro-LEDs with size of 4 μm × 16 μm was grown. Threading dislocation density in the micro-LED formed on sapphire nano-membrane was reduced by 59.6% due to the sapphire nano-membranes, which serve as compliant substrates, compared to GaN formed on a planar substrate. Enhancements in internal quantum efficiency by 44% and 3.3 times higher photoluminescence intensity were also observed from it. Cathodoluminescence emission at 435 nm was measured from c-plane multiple quantum wells (MQWs), whereas negligible emissions were detected from semi-polar sidewall facets. A core-shell-like MQWs were formed on all facets, hopefully lowering concentration of non-radiative surface recombination centers and reducing leakage current paths. This study provides an attractive platform for micro-LEDs by using sapphire nano-membrane.
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Displays,Inorganic LEDs,Science,Humanities and Social Sciences,multidisciplinary
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要点】:论文提出了一种在100纳米厚的蓝宝石纳米膜阵列上生长离散核壳型微发光二极管(micro-LED)阵列的方法,通过降低位错密度和增强内部量子效率,显著提高了LED的性能。

方法】:作者利用蓝宝石纳米膜阵列作为柔顺基底,避免了有害的等离子体刻蚀过程,生长出尺寸为4微米×16微米的核壳型多面体micro-LED阵列。

实验】:实验在蓝宝石纳米膜阵列上进行,通过测量发现,与平面基底相比,生长在纳米膜上的GaN微LED位错密度降低了59.6%,内部量子效率提高了44%,光致发光强度提高了3.3倍。在c平面多量子阱(MQWs)处测量到的阴极发光发射峰位于435纳米,而半极性侧壁面几乎无发射。所有面都形成了核壳型MQWs,有望降低非辐射表面复合中心浓度和减少漏电路径。