Mechanisms of Electromigration Damage in Cu Interconnects

G. Lian
G. Lian
K. Motoyama
K. Motoyama
Y. Ostrovski
Y. Ostrovski
C. M. Breslin
C. M. Breslin
M. Ali
M. Ali
J. Benedict
J. Benedict

international electron devices meeting, 2018.

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Abstract:

Mechanisms of electromigration (EM) damage in Cu interconnects through various CMOS nodes are reviewed. Pure Cu and Cu alloy interconnects that were used down to 14 nm node can no longer satisfy the electrical current used for 10 nm node and beyond in high-performance ICs. Cu interconnects with a metal cap should be used. Cu interface dif...More

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