Luminescence Energy and Carrier Lifetime As a Function of Applied Biaxial Strain in InGaN/GaN Quantum-Well Structures

Shapiro Noad A.,Feick Henning,Hong William, Gardner Nathan F., Goetz Werner K., Yang J. W., Weber Eicke R.

Journal of Applied Physics（2003）

Cited 33|Views24

Key words

Field-Effect Transistors

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