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High Performance K=2.5 ULK Backend Solution Using an Improved TFHM Architecture, Extendible to the 45nm Technology Node

R Fox,O Hinsinger J Mueller,W Besling

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST(2005)

STMicroelect

Cited 22|Views2
Abstract
An enhanced trench first hard mask (TFHM) backend integration architecture has been developed to facilitate straightforward ultra low-k (ULK) material insertion and to enable rapid yield learning at the 65nm technology node. Parametric, yield, reliability, and RC performance data are presented for the fully-integrated, improved TFHM 300mm ULK backend
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Key words
low-k dielectric thin films,masks,nanotechnology,porous materials,300 mm,45 nm,65 nm,backend integration architecture,reliability,trench first hard mask,ultra low-k material insertion,yield
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